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| BUP 314D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4226-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 42A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current, (limited by bond wire) 20 A 42 33 TC = 60 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 84 66 TC = 25 C TC = 90 C Diode forward current IF 28 TC = 90 C Pulsed diode current, tp = 1 ms IFpuls 168 TC = 25 C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 Jul-30-1996 C TC = 25 C Chip or operating temperature Storage temperature 1 Tj Tstg Semiconductor Group BUP 314D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 0.42 0.83 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 C VGE = 15 V, IC = 25 A, Tj = 125 C VGE = 15 V, IC = 42 A, Tj = 25 C VGE = 15 V, IC = 42 A, Tj = 125 C Zero gate voltage collector current ICES 0.8 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 8.5 20 1650 250 110 - S pF 2200 380 160 VCE = 20 V, IC = 25 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 BUP 314D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 75 110 ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Rise time tr 65 100 VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Turn-off delay time td(off) 420 560 VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Fall time tf 45 60 VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Free-Wheel Diode Diode forward voltage VF 2.2 1.7 2.8 - V IF = 25 A, VGE = 0 V, Tj = 25 C IF = 25 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr ns IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C Reverse recovery charge 130 180 C Qrr IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C 2.3 6 4.3 11 Semiconductor Group 3 Jul-30-1996 BUP 314D Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 55 A W Ptot 240 IC 45 40 35 30 200 160 25 120 20 15 10 40 5 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 80 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 2 tp = 4.1s 10 s ZthJC 10 -1 100 s 10 1 D = 0.50 1 ms 0.20 10 -2 10 0 10 ms 0.10 0.05 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-30-1996 BUP 314D Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 50 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 50 A 17V 15V 13V 11V 9V 7V IC 40 35 30 25 20 15 10 5 0 0 IC 40 35 30 25 20 15 10 5 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 50 A IC 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-30-1996 BUP 314D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 47 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 25 A 10 3 tdoff t tdoff ns t ns tdon 10 2 tdon tr 10 2 tr tf tf 10 1 0 10 20 30 40 A 60 10 1 0 20 40 60 80 100 120 140 IC RG 180 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 47 10 mWs E 8 7 6 5 4 3 2 1 0 0 Eoff Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 25 A 10 mWs E 8 7 6 5 4 3 2 1 Eoff Eon 10 20 30 40 A 60 IC 0 0 20 40 60 80 100 120 140 RG 180 Semiconductor Group 6 Jul-30-1996 BUP 314D Typ. gate charge VGE = (QGate) parameter: IC puls = 25 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 C Ciss 600 V 800 V 10 0 Coss 8 10 -1 6 4 2 0 0 10 -2 0 Crss 20 40 60 80 100 120 140 nC 170 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc/IC(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 Jul-30-1996 BUP 314D Typ. forward characteristics IF = f (VF) parameter: Tj 50 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode K/W IF 40 35 30 ZthJC 10 -1 Tj=125C 25 20 15 10 5 0 0.0 Tj=25C 10 -2 D = 0.50 0.20 0.10 10 -3 0.05 single pulse 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jul-30-1996 BUP 314D Package Outlines Dimensions in mm Weight: Semiconductor Group 9 Jul-30-1996 |
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